2019 Symposium on Third Generation Semiconductor
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26 September 2019 (Thursday) 9:00am-5:30pm
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Venue:
Grand Hall A, Phase 3, Hong Kong Science Park, Shatin N.T |
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Organized By:
Hong Kong Science and Technology Park; Chinese University of Hong Kong; City University of Hong Kong; Hong Kong University of Science and Technology; IEEE Hong Kong Section; IEEE AP/MTT Hong Kong Chapter |
Third-generation semiconductor materials generally refer to Gallium Nitride, Silicon Carbide, or other semiconductors that have a relatively wide bandgap (2 to 4 eV), compared to conventional semiconductor materials like silicon (1 to 1.5 eV). Devices made by wide bandgap semiconductors can operate at much higher voltages, frequencies and temperatures than those made by conventional semiconductors. These properties enable their widespread applications in consumer and industrial electronics, clean transportation, smart grid and alternative energy applications. Their inherent advantages in many applications, combined with the unique properties not found in conventional semiconductors, have attracted considerable attention from governments, industries, and research communities worldwide.
It is thus timely for semiconductor researchers and industry practitioners to organize a symposium to examine the current status of the field and project its future developments in advanced information and energy saving applications.
The one-day Symposium on Third Generation Semiconductor is organized in Grand Hall A of the Hong Kong Science and Technology Park on Thursday, 26 September 2019. Renowned technology leaders and industrialists from China, United States, Europe, and Japan are invited to come to Hong Kong to present their view on the technology and forecast their future development.
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